Obtaining Uniform Dopant Distributions in VLS-Grown Si Nanowires

a) Schematic illustrating typical doping concentrations in

TEM for Characterization of Nanowires and Nanorods

Controlling bottom-up rapid growth of single crystalline gallium

Indium (In)-Catalyzed Silicon Nanowires (Si NWs) Grown by the

Distribution of Active Impurities in Single Silicon Nanowires

Quantifying charge carrier concentration in ZnO thin films by Scanning Kelvin Probe Microscopy

Incorporation and redistribution of impurities into silicon

Nanomaterials, Free Full-Text

Quantifying charge carrier concentration in ZnO thin films by Scanning Kelvin Probe Microscopy. - Abstract - Europe PMC

PDF] Spatially resolved correlation of active and total doping

Direct measurement of dopant distribution in an individual vapour